Part 1 Semiconductor Physics
1.1 Crystal Structure
1.2 Energy Band
1.3 Intrinsic and Impurity Semiconductors
1.4 Effective Mass
1.5 Electronic Statistics and Carrier Density
1.6 Fermi Energy
1.7 Temperature Characteristics of Carrier Density
Appendix A, B, C
2.1 Drift Current
2.2 Diffusion Current
2.3 Generation and Recombination of Carriers and Continuity Equation
Appendix D
Part 2 Junction and Transistor
3.1 PN Junction
3.2 PN Junction Diode
3.3 PN Junction FET (JFET)
3.4 Bipolar Transistor (BJT)
Appendix E, F
4.1 Metal-Semiconductor Junction
4.2 Schottky Junction Diode
4.3 Metal-Semiconductor Junction FET (MESFET)
5.1 MOS Junction FET(MOSFET)
5.2 MOS Junction FET(MOSFET)
6.1 Heterojunction
6.2 Heterojunction FET (HFET)
6.2.1 HEMT
6.2.2 pseudomorphic-HEMT (pHEMT)
6.2.3 InP HEMT
6.2.4 Wide Band Gap (WBG) Device
6.3 Heterojunction Bipolar Transistor (HBT)